Temperature analysis of AlGaN/GaN high-electron-mobility transistors using micro-Raman scaterring spectroscopy and transient interferometric mapping

E. Pichonat (1) , J. Kuzmik , S. Bychikhin (2) , D. Pogany (2) , M.A. Di Forte-Poisson , B. Grimbert (3) , Christophe Gaquière (3)

1 LASIRE - Laboratoire Avancé de Spectroscopie pour les Intéractions la Réactivité et l'Environnement - UMR 8516
2 Institute for Solid-State Electronics
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

E. Pichonat, J. Kuzmik, S. Bychikhin, D. Pogany, M.A. Di Forte-Poisson, et al.. Temperature analysis of AlGaN/GaN high-electron-mobility transistors using micro-Raman scaterring spectroscopy and transient interferometric mapping. Proceedings of the first European Microwave Integrated Circuits Conference, Sep 2006, Manchester, United Kingdom. ⟨hal-00337246⟩