Selective growth of GaN nanodots and nanostripes on 6H-SiC substrates by metal organic vapor phase epitaxy

W.H. Goh (1) , J. Martin (2) , S. Ould-Saad Hamadi (2) , A. Martinez , L. Le Gratiet , A. Ramdane , S. Gautier (2) , N. Maloufi (3) , A. Ougazzaden (1)

1 UMI GT CNRS
2 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes
3 LETAM - Laboratoire d'étude des textures et application aux matériaux

Domaines: Optique [physics.optics]

W.H. Goh, J. Martin, S. Ould-Saad Hamadi, A. Martinez, L. Le Gratiet, et al.. Selective growth of GaN nanodots and nanostripes on 6H-SiC substrates by metal organic vapor phase epitaxy. physica status solidi (c), 2009, 6 (S2), pp.S510-S513. ⟨hal-00335012⟩