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Communication Dans Un Congrès Année : 2006

GaN materials growth by MOVPE in a new design of reactor using DMHy and NH3

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hal-00334614 , version 1 (27-10-2008)

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  • HAL Id : hal-00334614 , version 1

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S. Gautier, C. Sartel, S. Ould Saad Hamady, J. Martin, A. Sirenko, et al.. GaN materials growth by MOVPE in a new design of reactor using DMHy and NH3. IC MOVPE, 2006, Miyazaki, Japan. ⟨hal-00334614⟩
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