Room temperature operation of InAs/AlSb quantum cascade lasers

R. Teissier (1) , D. Barate (1) , A. Vicet (1) , C. Alibert (1) , A. N. Baranov (1) , X. Marcadet , C. Renard , M. Garcia , C. Sirtori , D. G. Revin , J.W. Cockburn

1 CEM2 - Centre d'Electronique et de Micro-optoélectronique de Montpellier

The room temperature operation of InAs/AlSb quantum cascade lasers is reported. The structure, grown by molecular beam epitaxy on an InAs substrate, is based on a vertical transition design and a low loss n+-InAs plasmon enhanced waveguide. The lasers emitting near 4.5 μm operate in pulse regime up to 300 K. The threshold current density of 3.18-mm-long lasers is 1.5 kA/cm2 at 83 K and 9 kA/cm2 at 300 K.

Mots clés: waveguide lasers; surface plasmons; semiconductor growth; current density; indium compounds; aluminium compounds; III-V semiconductors; quantum cascade lasers; molecular beam epitaxial growth

Domaines: Electronique

R. Teissier, D. Barate, A. Vicet, C. Alibert, A. N. Baranov, et al.. Room temperature operation of InAs/AlSb quantum cascade lasers. Applied Physics Letters, 2004, 85 (2), pp.167. ⟨10.1063/1.1768306⟩. ⟨hal-00330416⟩