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Article Dans Une Revue physica status solidi (c) Année : 2005

Structural and optical properties of ZnO fabricated by reactive e-beam and rf magnetron sputtering techniques

Résumé

Zinc oxide thin films have been grown on (100)-oriented silicon substrate by reactive e-beam evaporation and rf magnetron sputtering techniques and a comparative study is discussed in this paper. Structural, electrical and optical characteristics have been studied before and after annealing in air by measurements of X-ray diffraction, real parts of the dielectric coefficient, and electrical resistivity. X-ray diffraction measurements have shown that ZnO films are highly c-axis-oriented with a full width at half maximum (FWMH) lower than 0.5°. The electrical resistivity is about 1011 Ω.cm for magnetron sputtered films and it increases from 10-2Ω.cm to about 109Ω.cm after annealing at 750 °C for electron beam evaporated films. Ellipsometry measurements have shown some improvement of the real dielectric coefficient after annealing treatment at 750 °C of the ZnO evaporated by electron beam. The AFM images show that the surfaces of the e-beam evaporated ZnO and of the sputtered ZnO are relatively smooth.

Domaines

Electronique

Dates et versions

hal-00329248 , version 1 (10-10-2008)

Identifiants

Citer

Roy Al Asmar, Gérald Ferblantier, Frédérick Mailly, Alain Foucaran. Structural and optical properties of ZnO fabricated by reactive e-beam and rf magnetron sputtering techniques. physica status solidi (c), 2005, 2 (4), pp.1331-1335. ⟨10.1002/pssc.200460447⟩. ⟨hal-00329248⟩
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