Novel Hole well antimonide laser diodes on GaSb operating near 2.93 µm

L. Cerutti (1) , G. Boissier (1) , P. Grech (1) , A. Pérona (1) , J. Angellier (1) , Y. Rouillard (1) , G.C. Dente , R. Kaspi , F. Genty (1)

1 CEM2 - Centre d'Electronique et de Micro-optoélectronique de Montpellier

The operation of electrically-pumped type-II Sb-based laser diodes in which only the holes are quantum confined is reported. These laser structures were fabricated by molecular beam epitaxy on (001) GaSb substrates. In the multi-quantum well region, radiative recombinations originate from InGaSb hole wells embedded in InGaAsSb barriers lattice-matched to GaSb. Laser operation was demonstrated from such structures up to 243 K at 2.93 mum in the pulsed regime (200 ns, 5 kHz). A minimum threshold of about 12.8 kW/cm2 combined with a T0 around 70 K have been measured

Domaines: Electronique

L. Cerutti, G. Boissier, P. Grech, A. Pérona, J. Angellier, et al.. Novel Hole well antimonide laser diodes on GaSb operating near 2.93 µm. Electronics Letters, 2006, 42 (24), pp.1400-1401. ⟨10.1049/el:20062753⟩. ⟨hal-00329057⟩