Properties of RF magnetron sputtered zinc oxide thin films

R. Ondo Ndong (1) , G. Ferblantier (1) , M. Al Khalfioui (1) , Alexandre Boyer (1) , A. Foucaran (1)

1 CEM2 - Centre d'Electronique et de Micro-optoélectronique de Montpellier

ZnO thin films were deposited on silicon substrate by RF magnetron sputtering using metallic zinc target. A systematic study has been made of the influence of oxygen concentration and the RF power on the films structural properties. They exhibited a c-axis orientation of below 0.32° FWHM of X-ray rocking curves, an extremely high resistivity of 1012 Ω cm and an energy gap of 3.3 eV at room temperature. It was found that a RF power of 50 W, target to substrate distance 70 mm, very low gas pressures of 3.35 x 10-3 Torr in argon and oxygen mixed gas atmosphere giving to ZnO thin films a good homogeneity and a high crystallinity.

Mots clés: Operating mode; Roughness; Texture; Surfaces; Mechanical properties; Transition element compounds; Energy gap; Optical transmission; Electrical conductivity; Strained layer; Fabrication property relation; Fabrication structure relation; Crystal perfection; Electrical properties; Optical properties; norganic compounds; Magnetrons; Radiofrequency sputtering; Crystal growth from vapors; Thin films; Zinc oxides; Wide band gap semiconductors; II-VI semiconductors; Experimental study

Domaines: Electronique

R. Ondo Ndong, G. Ferblantier, M. Al Khalfioui, Alexandre Boyer, A. Foucaran. Properties of RF magnetron sputtered zinc oxide thin films. Journal of Crystal Growth, 2003, 255 (1-2), pp.130-135. ⟨10.1016/S0022-0248(03)01243-0⟩. ⟨hal-00328057⟩