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Article Dans Une Revue Journal of Crystal Growth Année : 2004

High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm

Résumé

The growth conditions and the operation of a diode-pumped AlGaAsSb/GaInAsSb type-I quantum-well vertical cavity surface emitting laser emitting near 2.3μm in an external cavity configuration are reported. The epitaxial structure was grown in two steps on a GaSb substrate by molecular beam epitaxy. It is made of a GaSb/AlAsSb Bragg reflector, a GaInAsSb/AlGaAsSb multi quantum-well active region and an AlAsSb heatspreader layer. A TEM00 low-divergence laser continuous wave mode operation was demonstrated from 277K up to 350K. A characteristic temperature T0 as high as 74K was measured just below 300K. Threshold incident pump power as low as 600 W/cm2 at 277K and a maximum output power of 8.5mW at 288K was observed.

Dates et versions

hal-00328054 , version 1 (09-10-2008)

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Citer

L. Cerutti, A. Garnache, A. Ouvrard, F. Genty. High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm. Journal of Crystal Growth, 2004, 268 (1 - 2), pp.128-134. ⟨10.1016/j.jcrysgro.2004.02.116⟩. ⟨hal-00328054⟩
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