Skip to Main content Skip to Navigation
Journal articles

Evaluation of Recent Technologies of Nonvolatile RAM

Abstract : Two types of recent nonvolatile random access memories (NVRAM) were evaluated for radiation effects: total dose and single event upset and latch-up under heavy ions and protons. Complementary irradiation with a laser beam provides information on sensitive areas of the devices.
Complete list of metadata
Contributor : Frédéric Darracq <>
Submitted on : Wednesday, October 8, 2008 - 12:31:10 PM
Last modification on : Tuesday, March 16, 2021 - 3:44:15 PM



T. Nuns, S. Duzellier, J. Bertrand, G. Hubert, V. Pouget, et al.. Evaluation of Recent Technologies of Nonvolatile RAM. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2008, 55 (4), pp.1982-1991. ⟨10.1109/TNS.2008.920255⟩. ⟨hal-00327362⟩



Record views