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Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2008

Evaluation of Recent Technologies of Nonvolatile RAM

Résumé

Two types of recent nonvolatile random access memories (NVRAM) were evaluated for radiation effects: total dose and single event upset and latch-up under heavy ions and protons. Complementary irradiation with a laser beam provides information on sensitive areas of the devices.

Domaines

Electronique
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Dates et versions

hal-00667419 , version 1 (07-02-2012)

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Citer

T. Nuns, S. Duzellier, J. Bertrand, G. Hubert, V. Pouget, et al.. Evaluation of Recent Technologies of Nonvolatile RAM. IEEE Transactions on Nuclear Science, 2008, 55 (4), pp.1982 - 1991. ⟨10.1109/TNS.2008.920255⟩. ⟨hal-00667419⟩
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