Relaxation and dephasing of the intersubband transitions in n-type InAs/AlSb multi quantum wells

S. Menzel , E.A. Zibik , D.G. Revin , J.W. Cockburn , J. Devenson (1) , R. Teissier (1, 2) , A. N. Baranov (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge

Intersubband electron relaxation and dephasing has been studied in InAs/AlSb multi quantum wells using time resolved femtosecond spectroscopy. The authors have measured a relaxation time T1 of 3 ps at T=300 K (and 4.6 ps at T=10 K) for a transition energy of 260 meV, which is in good agreement with our calculations. A dephasing time T2 of ~320 fs for optically excited electrons in the second subband was measured which determines the homogeneous broadening (~4.1 meV) of the absorption line.

Domaines: Electronique

S. Menzel, E.A. Zibik, D.G. Revin, J.W. Cockburn, J. Devenson, et al.. Relaxation and dephasing of the intersubband transitions in n-type InAs/AlSb multi quantum wells. Applied Physics Letters, 2007, 91 (7), pp.071918. ⟨10.1063/1.2769948⟩. ⟨hal-00327134⟩