Temperature Effect on Heavy-Ion Induced Parasitic Current on SRAM by Device Simulation: Effect on SEU Sensitivity - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2007

Temperature Effect on Heavy-Ion Induced Parasitic Current on SRAM by Device Simulation: Effect on SEU Sensitivity

Résumé

A temperature dependence analysis of single event transient currents induced by heavy-ions using TCAD simulation is performed in the 218 to 418 K range on a 0.18 mum SRAM cell manufactured by ATMEL. The single event upset (SEU) phenomena depends on both the heavy-ions-induced transient current and the technology. Temperature is shown to have a significant impact on the trends of heavy-ions-induced current. The SEU sensitivity is then expected to exhibit a large temperature dependence. However, a small influence on the SEU sensitivity is reported in this work on the studied technology.

Domaines

Electronique
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Dates et versions

hal-00327115 , version 1 (07-10-2008)

Identifiants

Citer

D. Truyen, J. Boch, B. Sagnes, N. Renaud, E. Leduc, et al.. Temperature Effect on Heavy-Ion Induced Parasitic Current on SRAM by Device Simulation: Effect on SEU Sensitivity. IEEE Transactions on Nuclear Science, 2007, 54 (4), pp.1025-1029. ⟨10.1109/TNS.2007.894298⟩. ⟨hal-00327115⟩
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