Highly sensitive pH measurements using a transistor composed of a large array of parallel silicon nanowires

Abstract : Silicon nanowire field-effect transistors (SiNW FETs) have emerged as good candidates for ultra-sensitive electrical detection of biological species, presenting a label-free alternative to colorimetry and fluorescence techniques. Here, a top-down approach has been used to fabricate the SiNW FETs using silicon-on-insulator (SOI) substrates. As in previous work, a change of the transistor conductance according to the pH of the solution is observed on a large pH interval [3-10.5], even for small variations of 0.1 pH units. The influence of several physico-chemical parameters such as gate voltage and buffer salinity, usually not adequately taken into account in previous papers, is discussed to achieve a better understanding of the detection phenomena.
Document type :
Journal articles
Complete list of metadatas

https://hal.archives-ouvertes.fr/hal-00324351
Contributor : Laure Lachapelle <>
Submitted on : Wednesday, September 24, 2008 - 4:42:47 PM
Last modification on : Friday, June 28, 2019 - 2:04:21 PM

Identifiers

Collections

Citation

Gaëlle Lehoucq, Paolo Bondavalli, Stéphane Xavier, Pierre Legagneux, Paul Abbyad, et al.. Highly sensitive pH measurements using a transistor composed of a large array of parallel silicon nanowires. Sensors and Actuators B: Chemical, Elsevier, 2007, 171-172, pp.127-134. ⟨10.1016/j.snb.2012.01.054⟩. ⟨hal-00324351⟩

Share

Metrics

Record views

116