UV AND OZONE CLEANING OF GASB (100) SURFACES PRIOR TO MBE GROWTH - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Surface Science Année : 1993

UV AND OZONE CLEANING OF GASB (100) SURFACES PRIOR TO MBE GROWTH

Résumé

The formation of sacrificial oxides by UV-ozone exposure on GaAs and InP is a well established procedure in the preparation of clean substrates for MBE growth. We describe a UV-ozone treatment used to prepare GaSb(100) substrates and report results obtained by Auger (Auger electron spectroscopy) which show that the quality of the so prepared substrates is excellent for MBE (molecular beam epitaxy).

Domaines

Electronique

Dates et versions

hal-00323401 , version 1 (22-09-2008)

Identifiants

Citer

N. Bertru, M. Nouaoura, J. Bonnet, L. Lassabatere, Eléna Bedel-Pereira, et al.. UV AND OZONE CLEANING OF GASB (100) SURFACES PRIOR TO MBE GROWTH. Applied Surface Science, 1993, 68 (3), pp.357-359. ⟨10.1016/0169-4332(93)90257-C⟩. ⟨hal-00323401⟩
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