HIGH-FREQUENCY NOISE AND DIFFUSION-COEFFICIENT OF HOT-ELECTRONS IN BULK AL0.25GA0.75AS

M. Demurcia (1) , E. Richard (1) , D. Gasquet (1) , J. P. Dubuc , J. Vanbremeersch (2) , J. Zimmermann (2)

1 CEM2 - Centre d'Electronique et de Micro-optoélectronique de Montpellier
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

We present experimental results of hot electron noise in Si doped Al0.25Ga0.75As test structures using pulsed high-frequency noise measurements. Noise temperature and longitudinal diffusion coefficient as functions of field strength are compared with those of Si doped GaAs. We find significant changes at high fields. Results are discussed in regard of electron scattering mechanisms.

Mots clés: GAAS; TRANSPORT; ALXGA1-XAS

Domaines: Electronique

M. Demurcia, E. Richard, D. Gasquet, J. P. Dubuc, J. Vanbremeersch, et al.. HIGH-FREQUENCY NOISE AND DIFFUSION-COEFFICIENT OF HOT-ELECTRONS IN BULK AL0.25GA0.75AS. Solid-State Electronics, 1994, 37 (8), pp.1477-1483. ⟨10.1016/0038-1101(94)90155-4⟩. ⟨hal-00322162⟩