Transport properties of V-VI semiconducting thermoelectric BiSbTe alloy thin films and their application to micro-module Peltier

A. Boulouz (1) , S. Chakraborty , Alain Giani (1) , F. Pascal-Delannoy (1) , Alexandre Boyer (1) , J. Schumann

1 CEM2 - Centre d'Electronique et de Micro-optoélectronique de Montpellier

Thin semiconducting thermoelectric films with narrow energy band gaps are considered to be very promising for future microdevice applications (sensors and generators). The polycrystalline BiSbTe alloys (V-VI semiconductors) are examples. In this report, the detailed temperature dependence of electrical resistivity [ρ(T)], n- and p-type carrier concentration [n(T) and p(T)], and Hall mobility [μ(T)] of n-type Bi2Te3, p-type Sb2Te3, and p-type (Bi1-xSbx)2Te3 (x=0.73 and 0.77) alloy films prepared by metalorganic chemical vapor deposition are presented in the range of 100-500 K (...)

Mots clés: bismuth compounds; narrow band gap semiconductors; semiconductor thin films; MOCVD coatings; electrical resistivity; carrier density; Hall mobility; Seebeck effect; Peltier effect; thermoelectric devices

Domaines: Electronique

A. Boulouz, S. Chakraborty, Alain Giani, F. Pascal-Delannoy, Alexandre Boyer, et al.. Transport properties of V-VI semiconducting thermoelectric BiSbTe alloy thin films and their application to micro-module Peltier. Journal of Applied Physics, 2001, 89 (9), pp.5009-5014. ⟨10.1063/1.1360701⟩. ⟨hal-00322071⟩