Nonlinear Characterization and Modeling of Carbon Nanotube Field-Effect Transistors

Arnaud Curutchet (1, 2) , Didier Theron (1) , Matthieu Werquin (3) , Damien Ducatteau (1) , Henri Happy (1) , Gilles Dambrine (1) , Jean-Marc Bethoux (1, 4) , Vincent Derycke (5) , Christophe Gaquière (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 IMS - Laboratoire de l'intégration, du matériau au système
3 MC2-Technologies
4 SOITEC SA
5 LEM - Laboratoire d'Electronique Moléculaire

We report for the first time to our knowledge large-signal measurements performed at 600 MHz and in time domain on carbon nanotube field-effect transistors (CNFETs) using a large-signal network analyzer. To overcome the very high mismatch between the high CNFET impedance and the basic 50-Omega configuration of the setup, the output impedance was matched with the help of an experimental active load-pull configuration. Hence, we were able to observe under large-signal conditions the nonlinear behavior of CNFETs. Static measurements and continuous-wave S ij -parameter measurements were made for many different biases. They were used in order to determine a nonlinear electrical model that has been validated thanks to the nonlinear measurements. The developed model opens the way for electrical CNFET circuit simulation and nonlinear applications of these devices.

Mots clés: CNFET; LSNA; neuronal modeller; non linear model

Domaines: Electronique

Arnaud Curutchet, Didier Theron, Matthieu Werquin, Damien Ducatteau, Henri Happy, et al.. Nonlinear Characterization and Modeling of Carbon Nanotube Field-Effect Transistors. IEEE Transactions on Microwave Theory and Techniques, 2008, 56 (7), pp.1505-1510. ⟨10.1109/TMTT.2008.925209⟩. ⟨hal-00315911⟩