Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window

Richard Hostein (1) , Adrien Michon (1) , Gregoire Beaudoin (1) , Noelle Gogneau (1) , Gilles Patriache (1) , Jean-Yves Marzin (1) , Isabelle Robert-Philip (1) , Isabelle Sagnes (1) , Alexios Beveratos (1)

1 LPN - Laboratoire de photonique et de nanostructures

The dynamic response of InAsP quantum dots grown on InP(001) substrates by low-pressure Metalorganic Vapor Phase Epitaxy emitting around 1.55 $\mu$m, is investigated by means of time-resolved microphotoluminescence as a function of temperature. Exciton lifetime steadily increases from 1 ns at low temperature to reach 4 ns at 300K while the integrated photoluminescence intensity decreases only by a factor of 2/3. These characteristics give evidence that such InAsP/InP quantum dots provide a strong carrier confinement even at room temperature and that their dynamic response is not affected by thermally activated non-radiative recombination up to room temperature.

Mots clés: Quantum dots; lifetime; InAs/InP; InAsP/InP

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Richard Hostein, Adrien Michon, Gregoire Beaudoin, Noelle Gogneau, Gilles Patriache, et al.. Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window. Applied Physics Letters, 2008, 93, pp.073106. ⟨10.1063/1.2965112⟩. ⟨hal-00303555⟩