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Article Dans Une Revue Applied Physics Letters Année : 2008

Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers

Résumé

A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of the magnetic anisotropy. In particular a reorientation of the easy axis toward the growth direction is observed for high P concentration. It offers an interesting alternative to the metamorphic approach, in particular for magnetization reversal experiments where epitaxial defects stongly affect the domain wall propagation.
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Dates et versions

hal-00293425 , version 1 (04-07-2008)

Identifiants

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Aristide Lemaître, Audrey Miard, Laurent Travers, Olivia Mauguin, Ludovic Largeau, et al.. Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers. Applied Physics Letters, 2008, 93, pp.021123. ⟨10.1063/1.2963979⟩. ⟨hal-00293425⟩
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