Investigations of ZnO thin films grown on c-Al2O3 by pulsed laser deposition in N2 + O2 ambient

Abstract : ZnO films were deposited on c-Al2O3 using pulsed laser deposition both with and without N2 in the growth ambient. X-ray diffraction revealed poorer crystal quality and surface morphology for one-step growths with N2 in the ambient. A marked improvement in both the crystallographic and surface quality was obtained through use of two-step growths employing nominally undoped ZnO buffer layers prior to growth with N2 in the ambient. All films showed majority n-type conduction in Hall measurements. Post-annealing for 30 minutes at 600 ºC in O2 systematically reduced both the carrier concentration and the conductivity. A base room temperature carrier concentration of 1016 cm-3 was linked to Al diffusing from the substrate. 4.2 K photoluminescence spectra exhibited blue bands associated with the growths having N2 in the ambient. Temperature dependent Hall measurements were consistent with N being incorporated in the films. Processed devices did not, however, show rectifying behaviour or electroluminescence.
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Submitted on : Tuesday, July 1, 2008 - 11:45:28 AM
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D. J. Rogers, D. C. Look, F. Hosseini Teherani, K. Minder, M. Razeghi, et al.. Investigations of ZnO thin films grown on c-Al2O3 by pulsed laser deposition in N2 + O2 ambient. physica status solidi (c), Wiley, 2008, 5 (9), pp.3084-3087. ⟨10.1002/pssc.200779315⟩. ⟨hal-00292362⟩

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