Characterization of stacking faults in thick 3C-SiC crystals using high-resolution diffuse X-ray scattering

Alexandre Boulle (1) , D. Chaussende (2) , F. Conchon (3) , G. Ferro (4) , O. Masson

1 IRCER-AXE3 - IRCER - Axe 3 : organisation structurale multiéchelle des matériaux
2 LMGP - Laboratoire des matériaux et du génie physique
3 PPrime [Poitiers] - Institut Pprime [UPR 3346]
4 LMI - Laboratoire des Multimatériaux et Interfaces

A novel non-destructive method to characterize stacking faults (SF) in 3C-SiC crystals is presented. This method is based on fast X-ray diffraction reciprocal space mapping and can be used qualitatively for routine analysis of 3C-SiC as SFs give rise to a characteristic star-like pattern in reciprocal space whose intensity depends on the SF density. The simulation of the diffusely scattered intensity streaks with an appropriate model enables one to also obtain quantitative results such as SF densities, mosaic domain size and mosaicity. The model is tested with a commercial (001) 3C-SiC crystal from HAST corporation, and then it is used to analyse SFs in (111) 3C-SiC crystals grown by continuous feed-physical vapour transport. 1

Mots clés: High resolution X-ray diffraction, Defects, Silicon carbide, Single crystal growth

Domaines: Matériaux

Alexandre Boulle, D. Chaussende, F. Conchon, G. Ferro, O. Masson. Characterization of stacking faults in thick 3C-SiC crystals using high-resolution diffuse X-ray scattering. Journal of Crystal Growth, 2008, 310 (5), pp.982-987. ⟨10.1016/j.jcrysgro.2007.11.149⟩. ⟨hal-02193853⟩