Low-frequency dynamic drain current modeling in AlGaN-GaN HEMTs

Valeria Di Giacomo (1) , Alberto Santarelli (2) , Fabio Filicori (2) , Antonio Raffo (1) , Giorgio Vannini (1) , Raphaël Aubry (3) , Christophe Gaquière (3)

1 UniFE - Università degli Studi di Ferrara = University of Ferrara
2 UNIBO - Alma Mater Studiorum Università di Bologna = University of Bologna
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

Low-frequency dispersive effects in AlGaN/GaN HEMTs are here modeled above their cutoff frequencies by adopting a modeling approach developed for GaAs PHEMTs. To this aim, a new identification procedure is proposed, which allows to obtain very accurate predictions of the pulsed drain currents, even in the presence of strong kink effects in the DC characteristics. In addition, a dedicated algorithm of data extrapolation is used, in order to make the model more computationally efficient.

Mots clés: Aluminum gallium nitride; HEMTs; MODFETs; Dispersion; Gallium nitride; Cutoff frequency; Gallium arsenide; PHEMTs; Extrapolation; Computational modeling

Domaines: Sciences de l'ingénieur [physics]

Valeria Di Giacomo, Alberto Santarelli, Fabio Filicori, Antonio Raffo, Giorgio Vannini, et al.. Low-frequency dynamic drain current modeling in AlGaN-GaN HEMTs. 2nd European Microwave Integrated Circuits Conference, EuMIC 2007, Oct 2007, Munich, Germany. pp.68-71, ⟨10.1109/EMICC.2007.4412649⟩. ⟨hal-00284404⟩