X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Electronics Letters Année : 2007

X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate

Résumé

AlInN/AlN/GaN based HEMTs were fabricated on SiC substrate to demonstrate the high potentiality of these heterostructures. The presented results confirm the high performances reachable by AlInN based technology with an output power of 6.8 W/mm at 10 GHz with a gate length of 0.25 µm. A good extrinsic transconductance value of 400 mS/mm was also measured on these transistors. The results are believed to be the best power results published about AlInN/GaN HEMTs.
Fichier non déposé

Dates et versions

hal-00283494 , version 1 (30-05-2008)

Identifiants

Citer

Nicolas Sarazin, Olivier Jardel, Erwan Morvan, Raphaël Aubry, M. Laurent, et al.. X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate. Electronics Letters, 2007, 43 (23), pp.1317-1318. ⟨10.1049/el:20072598⟩. ⟨hal-00283494⟩
106 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More