HAL will be down for maintenance from Friday, June 10 at 4pm through Monday, June 13 at 9am. More information
Skip to Main content Skip to Navigation
Journal articles

Physical study of the dissipated power area in high electron mobility transistors for thermal modelling

B. Benbakhti Michel Rousseau Jean-Claude de Jaeger 1
1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
Document type :
Journal articles
Complete list of metadata
https://hal.archives-ouvertes.fr/hal-00283492
Contributor : Collection Iemn Connect in order to contact the contributor
Submitted on : Friday, May 30, 2008 - 10:57:52 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:21 PM

Links full text

istex

Identifiers

Collections

IEMN | CNRS | UNIV-LILLE | UNIV-VALENCIENNES

Citation

B. Benbakhti, Michel Rousseau, Jean-Claude de Jaeger. Physical study of the dissipated power area in high electron mobility transistors for thermal modelling. Microelectronics Journal, Elsevier, 2007, 38, pp.7-13. ⟨10.1016/j.mejo.2006.07.025⟩. ⟨hal-00283492⟩

Export

BibTeX TEI DC DCterms EndNote Datacite

Share

Metrics

Record views

13