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Physical study of the dissipated power area in high electron mobility transistors for thermal modelling

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https://hal.archives-ouvertes.fr/hal-00283492
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Submitted on : Friday, May 30, 2008 - 10:57:52 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:21 PM

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B. Benbakhti, Michel Rousseau, Jean-Claude de Jaeger. Physical study of the dissipated power area in high electron mobility transistors for thermal modelling. Microelectronics Journal, Elsevier, 2007, 38, pp.7-13. ⟨10.1016/j.mejo.2006.07.025⟩. ⟨hal-00283492⟩

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