Quick planarisation based on hydrogen silsesquioxane (HSQ) for deep etched InP based structures

Malek Zegaoui (1, 2) , Joseph Harari (2, 3) , Nargess Choueib (2, 3) , V. Magnin (2, 3) , Didier Decoster (2, 3)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 OPTO - IEMN - Optoélectronique - IEMN
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

The ability of HSQ resist films to planarise active deep etched (1.5-2m) InP based structures with electrodes is demonstrated for the first time. Vertically etched III-V semiconductor devices require planarisation of the passivation material for metal interconnections and device integration. A new and quicker method is presented, for which it is not necessary to use mask opening on the top of the devices to define via patterns. A comparison between conventional silicon dioxide (SiO2) planarisation and the demonstrated HSQ method validates the interest of the latter.

Domaines: Sciences de l'ingénieur [physics]

Malek Zegaoui, Joseph Harari, Nargess Choueib, V. Magnin, Didier Decoster. Quick planarisation based on hydrogen silsesquioxane (HSQ) for deep etched InP based structures. Electronics Letters, 2007, 43 (22), pp.1234-1236. ⟨10.1049/el:20071889⟩. ⟨hal-00283081⟩