1/f(gamma) tunnel current noise through Si-bound alkyl monolayers

N. Clement (1) , S. Pleutin , O. Seitz , S. Lenfant , D. Vuillaume

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f γ power spectrum noise with 1< γ <1.2. We observe a slight biasdependent background of the normalized current noise power spectrum (SI/I²). However, a local increase is also observed over a certain bias range, mainly if V > 0.4 V, with an amplitude varying from device to device. We attribute this effect to an energy-dependent trap-induced tunnel current. We find that the background noise, SI, scales with 2 (∂I / ∂V ) . A model is proposed showing qualitative agreements with our experimental data

Domaines: Physique [physics]

N. Clement, S. Pleutin, O. Seitz, S. Lenfant, D. Vuillaume. 1/f(gamma) tunnel current noise through Si-bound alkyl monolayers. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 76, pp.205407-1-5. ⟨10.1103/PhysRevB.76.205407⟩. ⟨hal-00283050⟩