Characterization and fabrication of InGaAsP/InP deep-etched micro-waveguides

Arnaud Beaurain (1) , Samuel Dupont (1) , Hongwu Li (1) , Jean-Pierre Vilcot (2, 1) , Christiane Legrand (3, 1) , Joseph Harari (1) , Monique Constant (1, 4) , Didier Decoster (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 PhLAM - Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523
3 Unité mixte de recherche biologie moléculaire de la cellule
4 LASIRE - Laboratoire Avancé de Spectroscopie pour les Intéractions la Réactivité et l'Environnement - UMR 8516

InGaAsP/InP micro-waveguides are fabricated by a deep (>3 μm) Reactive Ion Etching. The devices losses are measured by the Fabry–Perot technique for guide width contained between 10 μm and 0.5 μm. The measured losses range from 2 dB/mm to 14 dB/mm.

Mots clés: Fabrication; InGaAsP/InP; Integrated optics; Loss measurement; Micro-waveguide

Domaines: Sciences de l'ingénieur [physics]

Arnaud Beaurain, Samuel Dupont, Hongwu Li, Jean-Pierre Vilcot, Christiane Legrand, et al.. Characterization and fabrication of InGaAsP/InP deep-etched micro-waveguides. Microwave and Optical Technology Letters, 2004, 40 (3), pp.216-218. ⟨10.1002/mop.11333⟩. ⟨hal-00141171⟩