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Journal articles

Characterization and fabrication of InGaAsP/InP deep-etched micro-waveguides

Abstract : InGaAsP/InP micro-waveguides are fabricated by a deep (>3 m) Reactive Ion Etching. The devices losses are measured by the Fabry-Perot technique for guide width contained between 10 m and 0.5 m. The measured losses range from 2 dB/mm to 14 dB/mm. © 2004 Wiley Periodicals, Inc.
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Contributor : Hervé Vezin Connect in order to contact the contributor
Submitted on : Wednesday, April 2, 2008 - 9:56:24 AM
Last modification on : Friday, April 15, 2022 - 2:40:01 PM

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A. Beaurain, Samuel Dupont, H.W. Li, Jean-Pierre Vilcot, C. Legrand, et al.. Characterization and fabrication of InGaAsP/InP deep-etched micro-waveguides. Microwave Opt. Technol. Lett., 2004, 40/3, pp.216-218. ⟨10.1002/mop.11333⟩. ⟨hal-00269056⟩



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