Room-temperature Terahertz Emission from Nanometer Field Effect Transistors

N. Dyakonova (1) , Michel Dyakonov (2) , A. El Fatimy (1) , J. Lusakowski (1) , W. Knap (1) , M.-A. Poisson , E. Morvan , S. Bollaert (3) , A. Shchepetov (3) , Yannick Roelens (3) , Christophe Gaquière (3) , D. Theron (3) , A. Cappy (3)

1 GES - Groupe d'étude des semiconducteurs
2 LPTA - Laboratoire de Physique Théorique et Astroparticules
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

Room-temperature generation of terahertz radiation in nanometer gate length InAlAs/InGaAs and AlGaN/GaN high-mobility transistors is reported. A well-defined source-drain voltage threshold for the emission exists, which depends on the gate bias. Spectral analysis of the emitted radiation is presented. The highest emission power emitted from a single device reached 0.1 µW.

Mots clés: ndium compounds; aluminium compounds; gallium compounds; gallium arsenide; III-V semiconductors; wide band gap semiconductors; high electron mobility transistors; submillimetre wave transistors; submillimetre wave generation PACS: 85.30.Tv; 84.40.-x

Domaines: Science des matériaux [cond-mat.mtrl-sci]

N. Dyakonova, Michel Dyakonov, A. El Fatimy, J. Lusakowski, W. Knap, et al.. Room-temperature Terahertz Emission from Nanometer Field Effect Transistors. Applied Physics Letters, 2006, 88 (14), pp.141906. ⟨10.1063/1.2191421⟩. ⟨hal-00264792⟩