High energy N+ ion implantation in 4H–SiC

Erwan Oliviero (1) , Mihai Lazar (1) , A. Gardon (2) , C. Peaucelle (2) , A. Perrat (2) , J.J. Grob (3) , Christophe Raynaud (1) , Dominique Planson (1)

1 AMPERE - Ampère
2 IPNL - Institut de Physique Nucléaire de Lyon
3 InESS - Institut d'Electronique du Solide et des Systèmes

Box profiles were formed in 4H–SiC epilayers by different combination of multi-energy N+ ion implantations at room temperature, with energy ranges varying from [0.5–2 MeV] to [0.4–4 MeV]. The fluences were adjusted in order to keep a constant plateau concentration between 2 and 3 × 1018 cm−3. Post-implantation annealing were performed at 1650 or 1800 °C up to 45 min in ultra-pure argon atmosphere, to activate the dopants. During this process, some samples were encapsulated with a graphite (C) cap obtained by thermal conversion of a spin-coated AZ5214E photoresist. Both as-implanted and annealed samples were analyzed by Rutherford Backscattering Spectroscopy in channeling mode (RBS/C) with 3.5 MeV He+ beam to quantify the induced damage. Dopant profiles were obtained by Secondary Ion Mass Spectroscopy (SIMS) measurements and compared to Monte–Carlo (MC) simulation.

Mots clés: Silicon carbide; Ion implantation; Dopants; High energy; Nitrogen; Silicon carbide; Silicon carbide; Silicon carbide

Domaines: Chimie-Physique [physics.chem-ph]

Erwan Oliviero, Mihai Lazar, A. Gardon, C. Peaucelle, A. Perrat, et al.. High energy N+ ion implantation in 4H–SiC. 15th International Conference on Ion Beam Modification of Materials, Sep 2006, Taormina, Italy. pp.265-269, ⟨10.1016/j.nimb.2007.01.256⟩. ⟨in2p3-00170330⟩