Resonant tunneling in partially disordered silicon nanostructures - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue EPL - Europhysics Letters Année : 2001

Resonant tunneling in partially disordered silicon nanostructures

Rahul G. Krishnan
  • Fonction : Auteur
  • PersonId : 974193
Laurent Montès
  • Fonction : Auteur
  • PersonId : 1040653

Résumé

Low-temperature vertical carrier transport in layered structures comprised of Si nanocrystals separated in the growth direction by angstrom-thick SiO2 layers exhibits entirely unexpected, well-defined resonances in conductivity. An unusual alternating current (ac) conductivity dependence on frequency and low magnetic field, negative differential conductivity, reproducible N-shaped switching and self-oscillations were observed consistently. The modeled conductivity mechanism is associated with resonant hole tunneling via quantized valence band states of Si nanocrystals. Tight-binding calculations of the quantum confinement effect for different Si nanocrystal sizes and shapes strongly support the tunneling model.

Dates et versions

hal-00250423 , version 1 (12-02-2008)

Identifiants

Citer

Leonid Tsybeskov, G.F. Grom, Rahul G. Krishnan, Laurent Montès, P.M. Fauchet, et al.. Resonant tunneling in partially disordered silicon nanostructures. EPL - Europhysics Letters, 2001, 55, pp.552-558. ⟨10.1209/epl/i2001-00451-1⟩. ⟨hal-00250423⟩
30 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More