Retention in metal-oxide-semiconductor structures with two embedded self-aligned Ge-nanocrystal layers

S. Duguay (1) , S. Burignat , P. Kern (1) , J.J. Grob (1) , A. Souifi , A. Slaoui (1)

1 InESS - Institut d'Electronique du Solide et des Systèmes

S. Duguay, S. Burignat, P. Kern, J.J. Grob, A. Souifi, et al.. Retention in metal-oxide-semiconductor structures with two embedded self-aligned Ge-nanocrystal layers. Semicond. Sci. Technol., 2007, 22, pp. 837-842. ⟨hal-00250270⟩