RF Microwave switches based on reversible semiconductor metal transition of VO2 thin films synthetized by pulsed laser deposition.

Frédéric Dumas-Bouchiat (1) , Corinne Champeaux (1) , Alain Catherinot (1) , Aurelian Crunteanu (2) , Pierre Blondy (2)

1 Axe 2 : procédés de traitements de surface
2 MINACOM

Microwave switching devices based on the semiconductor-metal transition of VO2 thin films were developped on two types of substrates (C-plane sapphire and SiO2∕Si), and in both shunt and series configurations. Under thermal activation, the switches achieved up to 30–40dB average isolation of the radio-frequency (rf) signal on 500MHz–35GHz frequency band with weak insertion losses. These VO2-based switches can be electrically activated with commutation times less than 100ns, which make them promising candidates for realizing efficient and simple rf switches.

Domaines: Electronique; Matériaux

Frédéric Dumas-Bouchiat, Corinne Champeaux, Alain Catherinot, Aurelian Crunteanu, Pierre Blondy. RF Microwave switches based on reversible semiconductor metal transition of VO2 thin films synthetized by pulsed laser deposition.. Applied Physics Letters, 2007, 91 (22), pp.2235505. ⟨10.1063/1.2815927⟩. ⟨hal-00198660⟩