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Influence of Laser Pulse Duration in Single Event Upset Testing

Abstract : Device simulations of laser induced SEU in an SRAM cell are performed with pulse durations from 100 fs to 100µs. SEU threshold energy is notably dependent on the pulse duration. Two regimes are identified and modeled analytically and electrically.
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https://hal.archives-ouvertes.fr/hal-00204547
Contributor : Frédéric Darracq <>
Submitted on : Monday, January 14, 2008 - 6:13:32 PM
Last modification on : Thursday, July 25, 2019 - 4:34:15 PM

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Alexandre Douin, Vincent Pouget, Frédéric Darracq, Dean Lewis, Pascal Fouillat, et al.. Influence of Laser Pulse Duration in Single Event Upset Testing. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2006, 53 (4), pp.1799-1805, 10.1109/TNS.2006.880939. ⟨10.1109/TNS.2006.880939⟩. ⟨hal-00204547⟩

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