Influence of Laser Pulse Duration in Single Event Upset Testing

Abstract : Device simulations of laser induced SEU in an SRAM cell are performed with pulse durations from 100 fs to 100µs. SEU threshold energy is notably dependent on the pulse duration. Two regimes are identified and modeled analytically and electrically.
Type de document :
Article dans une revue
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2006, 53 (4), pp.1799-1805, 10.1109/TNS.2006.880939. 〈10.1109/TNS.2006.880939〉
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https://hal.archives-ouvertes.fr/hal-00204547
Contributeur : Frédéric Darracq <>
Soumis le : lundi 14 janvier 2008 - 18:13:32
Dernière modification le : jeudi 4 octobre 2018 - 11:14:07

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Alexandre Douin, Vincent Pouget, Frédéric Darracq, Dean Lewis, Pascal Fouillat, et al.. Influence of Laser Pulse Duration in Single Event Upset Testing. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2006, 53 (4), pp.1799-1805, 10.1109/TNS.2006.880939. 〈10.1109/TNS.2006.880939〉. 〈hal-00204547〉

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