Properties of aluminum oxide thin films deposited by pulsed laser deposition and plasma enhanced chemical vapor deposition

C. Cibert (1) , H. Hidalgo (1) , Corinne Champeaux (2) , Pascal Tristant (2) , C. Tixier (1) , J. Desmaison (1) , Alain Catherinot (2)

1 SPCTS - Science des Procédés Céramiques et de Traitements de Surface
2 Axe 2 : procédés de traitements de surface

The chemical, structural, mechanical and optical properties of thin aluminum oxide films deposited at room temperature (RT) and 800 °C on (100) Si and Si–SiO2 substrates by pulsed laser deposition and plasma enhanced chemical vapor deposition are investigated and compared. All films are smooth and near stoichiometric aluminum oxide. RT films are amorphous, whereas γ type nano-crystallized structures are pointed out for films deposited at 800 °C. A dielectric constant of ∼ 9 is obtained for films deposited at room temperature and 11–13 for films deposited at 800 °C. Young modulus and hardness are in the range 116–254 GPa and 6.4–28.8 GPa respectively. In both cases, the results show that the deposited films have very interesting properties opening applications in mechanical, dielectric and optical fields.

Mots clés: PECVD; PLD

Mots clés: Aluminum oxide; Thin films properties

C. Cibert, H. Hidalgo, Corinne Champeaux, Pascal Tristant, C. Tixier, et al.. Properties of aluminum oxide thin films deposited by pulsed laser deposition and plasma enhanced chemical vapor deposition. Thin Solid Films, 2008, 516, pp.1290-1296. ⟨10.1016/j.tsf.2007.05.064⟩. ⟨hal-00203153⟩