Magnetic properties of HfO2 thin films

Nicolas Hadacek (1) , Alexandre Nossov (2) , Laurent Ranno (3) , Pierre Strobel (4) , Rose-Marie Galéra (5)

1 NEEL - QuantECA - Circuits électroniques quantiques Alpes
2 Electric Phenomena Laboratory, Institute of Metal Physics
3 NEEL - MNM - Micro et NanoMagnétisme
4 NEEL - MRS - Matériaux, Rayonnements, Structure
5 NEEL - MagSup - Magnétisme et Supraconductivité

We report on the magnetic and transport studies of hafnium oxide thin films grown by pulsed-laser deposition on sapphire substrates under different oxygen pressures, ranging from 10-7 to 10-1 mbar. Some physical properties of these thin films appear to depend on the oxygen pressure during growth: the film grown at low oxygen pressure (P≈10-7 mbar) has a metallic aspect and is conducting, with a positive Hall signal, while those grown under higher oxygen pressures (7 x 10-5≤P≤0.4 mbar) are insulating. However, no intrinsic ferromagnetic signal could be attributed to the HfO2 films, irrespective of the oxygen pressure during the deposition.

Mots clés: ferromagnetisme d0; transition metal oxydes; magnetism

Domaines: Electrons fortement corrélés [cond-mat.str-el]

Nicolas Hadacek, Alexandre Nossov, Laurent Ranno, Pierre Strobel, Rose-Marie Galéra. Magnetic properties of HfO2 thin films. Journal of Physics: Condensed Matter, 2007, 19 (48), pp.486206. ⟨10.1088/0953-8984/19/48/486206⟩. ⟨hal-00197196⟩