Large area silicon epitaxy using pulsed DC magnetron sputtering deposition

Pascale Plantin (1) , Fatiha Challali (2) , Olivier Carriot (2) , Frédéric Lainat (2) , Michel Ancilotti (3) , Gérard Gadot (2) , Pascal Brault (1)

1 GREMI - Groupe de recherches sur l'énergétique des milieux ionisés
2 MHS Electronics
3 MHS Equipment

Pulsed DC magnetron sputtering is used for deposition of large area crystalline (200 mm) silicon 100nm thin films. p doped Si substrates are flashed (Ts = 900 °C) under high vacuum (5 10-6 Pa) for removing native oxide and restoring surface crystallinity. Subsequent boron doped Si homoepitaxy is obtained at substrate temperature below 500°C for pulse frequency of 150 kHz.

Mots clés: Magnetron sputtering; Epitaxy; Crystalline silicium layer

Domaines: Plasmas; Micro et nanotechnologies/Microélectronique

Pascale Plantin, Fatiha Challali, Olivier Carriot, Frédéric Lainat, Michel Ancilotti, et al.. Large area silicon epitaxy using pulsed DC magnetron sputtering deposition. Microelectronic Engineering, 2008, 85, pp.636-639. ⟨10.1016/j.mee.2007.11.007⟩. ⟨hal-00191122⟩