BJT avalanche breakdown voltage improvement by introduction of a floating P-layer in the epitaxial collector region

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https://hal.archives-ouvertes.fr/hal-00189380
Contributor : Sebastien Fregonese <>
Submitted on : Tuesday, November 20, 2007 - 5:34:40 PM
Last modification on : Thursday, January 11, 2018 - 6:21:08 AM

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  • HAL Id : hal-00189380, version 1

Citation

Thomas Zimmer, M. N?doye, Noelle Lewis, Jean Batiste Duluc, Helene Fremont, et al.. BJT avalanche breakdown voltage improvement by introduction of a floating P-layer in the epitaxial collector region. Symposium on Microelectronic Facturing, Sep 1998, Santa Clara, United States. pp._. ⟨hal-00189380⟩

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