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ELECTROSTATICALLY-DRIVEN RESONATOR ON SOI WITH IMPROVED TEMPERATURE STABILITY

Abstract : This paper deals with a single-crystal-silicon (SCS) MEMS resonator with improved temperature stability. While simulations have shown that the temperature coefficient of resonant frequency can be down to 1 ppm/°C, preliminary measurements on non-optimised structures gave evidence of a temperature coefficient of 29 ppm/°C. Design, optimisation, experimental results with post process simulation and prospective work are presented.
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https://hal.archives-ouvertes.fr/hal-00189322
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Submitted on : Tuesday, November 20, 2007 - 4:02:38 PM
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  • HAL Id : hal-00189322, version 1
  • ARXIV : 0711.3288

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A. Giridhar, F. Verjus, F. Marty, A. Bosseboeuf, Tarik Bourouina. ELECTROSTATICALLY-DRIVEN RESONATOR ON SOI WITH IMPROVED TEMPERATURE STABILITY. DTIP 2006, Apr 2006, Stresa, Lago Maggiore, Italy. 5 p. ⟨hal-00189322⟩

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