CNTFET modeling and reconfigurable logic circuit design

Ian O'Connor (1) , Junchen Liu (1) , Frédéric Gaffiot (1) , Fabien Prégaldiny (2) , Cristell Maneux (3) , C. Lallement (4) , Johnny Goguet (4) , Sebastien Fregonese (4) , Thomas Zimmer (4) , Lorena Anghel (5) , Régis Leveugle (5) , T. Dang (5)

1 INL - Institut des Nanotechnologies de Lyon
2 PHASE - Laboratoire Physique de l'Homme Appliquée à Son Environnement
3 InESS - Institut d'Electronique du Solide et des Systèmes
4 IMS - Laboratoire de l'intégration, du matériau au système
5 TIMA - Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés

This paper examines aspects of design technology required to explore advanced logic-circuit design using carbon nanotube field-effect transistor (CNTFET) devices. An overview of current types of CNTFETs is given and highlights the salient characteristics of each. Compact modeling issues are addressed and new models are proposed implementing: 1) a physics-based calculation of energy conduction sub-band minima to allow a realistic analysis of the impact of CNT helicity and radius on the dc characteristics; 2) descriptions of ambipolar behavior in Schottky-barrier CNTFETs and ambivalence in double-gate CNTFETs (DG-CNTFETs). Using the available models, the influence of the parameters on the device characteristics were simulated and analyzed. The exploitation of properties specific to CNTFETs to build functions inaccessible to MOSFETs is also described, particularly with respect to the use of DG-CNTFETs in fine-grain reconfigurable logic.

Mots clés: CNTFET; circuit-design

Domaines: Micro et nanotechnologies/Microélectronique

Ian O'Connor, Junchen Liu, Frédéric Gaffiot, Fabien Prégaldiny, Cristell Maneux, et al.. CNTFET modeling and reconfigurable logic circuit design. IEEE Transactions on Circuits and Systems, 2007, 54 (11), pp.2365-2379. ⟨10.1109/TCSI.2007.907835⟩. ⟨hal-00187137⟩