Thermodynamical calculations on the chemical vapor transport of silicon carbide

Didier Chaussende (1) , Yves Monteil (1) , Patrick Aboughe-Nze (1) , Christian Brylinski (2) , Jean Bouix (1)

1 LMI - Laboratoire des Multimatériaux et Interfaces
2 Laboratoire Central de Recherche

We have performed thermodynamical calculations in order to oversee the potential of a new method for growing silicon carbide: the chemical vapour transport process. In this way we have been able to select possible transporting agents and to show the nature of the deposits with varying parameters.

Mots clés: Thermodynamical calculations; Chemical vapour transport; Silicon carbide

Domaines: Matériaux

Didier Chaussende, Yves Monteil, Patrick Aboughe-Nze, Christian Brylinski, Jean Bouix. Thermodynamical calculations on the chemical vapor transport of silicon carbide. Materials Science and Engineering: B, 1999, 61-62, pp.98-101. ⟨hal-00186935⟩