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Evolution of base current in C-In doped GaInP/GaAs HBT under current induced stress

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https://hal.archives-ouvertes.fr/hal-00183480
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Submitted on : Tuesday, October 30, 2007 - 8:47:40 AM
Last modification on : Thursday, January 11, 2018 - 6:21:08 AM

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  • HAL Id : hal-00183480, version 1

Citation

Cristell Maneux, Nathalie Labat, Pascal Fouillat, Andre Touboul, Yves Danto. Evolution of base current in C-In doped GaInP/GaAs HBT under current induced stress. European Solid State Device Research Conference (Ed. Frontières), ESSDERC, 1998, France. pp.1. ⟨hal-00183480⟩

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