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Communication Dans Un Congrès Année : 2006

Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and Nitrogen

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hal-00181889 , version 1 (24-10-2007)

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  • HAL Id : hal-00181889 , version 1

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C. Sartel, S. Gautier, S. Ould Saad Hamady, N. Maloufi, J. Martin, et al.. Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and Nitrogen. EMRS spring meeting, 2006, Nice, France. ⟨hal-00181889⟩
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