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Article Dans Une Revue Journal of Crystal Growth Année : 2007

GaN materials growth by MOVPE in a new design of reactor using DMHy and NH3

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hal-00181789 , version 1 (24-10-2007)

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  • HAL Id : hal-00181789 , version 1

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S. Gautier, C. Sartel, S. Ould-Saad Hamady, J. Martin, A. Sirenko, et al.. GaN materials growth by MOVPE in a new design of reactor using DMHy and NH3. Journal of Crystal Growth, 2007, 298, pp.428-432. ⟨hal-00181789⟩
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