GaN thin films on z- and x-cut LiNbO3 substrates by MOVPE

A. Ougazzaden (1, 2) , T. Moudakir (1) , T. Aggerstam , G. Orsal (1) , Jean-Paul Salvestrini (1) , S. Gautier (1) , A. Sirenko

1 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes
2 UMI GT CNRS

We report epitaxial growth of GaN layers on z- and x-cut LiNbO3 substrates using MOVPE. GaN layers with the thick- ness of 450 nm were characterized using X-ray diffraction. For both, z- and x-cut orientations of LiNbO3 substrates, the GaN layers have c-axis orientation normal to the substrate plane and the in-plane lattice orientation of GaN layers coincides with the primary axes of LiNbO3 substrates. Although GaN layers exhibit almost complete strain relaxation, the re- sidual compressive strain determined with respect to a free-standing GaN is of the order of +0.37% and +0.2% for z- and x-cut substrates, respectively.

Domaines: Matériaux; Science des matériaux [cond-mat.mtrl-sci]

A. Ougazzaden, T. Moudakir, T. Aggerstam, G. Orsal, Jean-Paul Salvestrini, et al.. GaN thin films on z- and x-cut LiNbO3 substrates by MOVPE. physica status solidi (c), 2008, 1-3, ⟨10.1002/pssc.200778490⟩. ⟨hal-00181670⟩