Growth of GaN by MOVPE on ZnO-buffered c-sapphire Substrates

Abstract : The materials quality and availability of large-area bulk GaN substrates is currently considered a key problem for the continuing development of improved GaN-based devices. Since industrial fabrication of bulk GaN substrates with suitable materials quality has proven very difficult, the opto-GaN industry is currently based on heteroepitaxy using either c-sapphire or 6H SiC substrates. ZnO is promising as a substrate material for GaN because it has the same wurtzite structure and a relatively small lattice mismatch (~1.8%). In this study we have successfully grown by MOVPE GaN on ZnO-buffered c-sapphire. The growth conditions required to both prevent ZnO degradation and grow monocrystal thin film of GaN have been obtained. SEM, HRXRD and Micro-Raman characterizations underlined the presence of the two layers GaN and ZnO with high structural quality.
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Article dans une revue
Journal of Crystal Growth, Elsevier, 2008, 310, pp.944-947. 〈10.1016/j.jcrysgro.2007.11.137〉
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https://hal.archives-ouvertes.fr/hal-00181628
Contributeur : Jean Paul Salvestrini <>
Soumis le : lundi 7 avril 2008 - 10:49:57
Dernière modification le : jeudi 5 avril 2018 - 12:30:20

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A. Ougazzaden, D.J. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, et al.. Growth of GaN by MOVPE on ZnO-buffered c-sapphire Substrates. Journal of Crystal Growth, Elsevier, 2008, 310, pp.944-947. 〈10.1016/j.jcrysgro.2007.11.137〉. 〈hal-00181628〉

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