Skip to Main content Skip to Navigation
Conference papers

Dispersion Impact on Ballistic CNTFET n+-i-n+ Performances

Abstract : The designs integrating the promising carbon nanotube transistors (CNTFET) will have to take into account the constraints implied by the strong dispersion inherent to nanotube manufacturing. This paper proposes to characterize the main CNTFET performances : on-current Ion, Ion/Ioff ratio and inverse sub-threshold slope S according to the dispersion on the nanotube diameter. For this purpose, we use a compact model suitable for testing several diameter values.
Complete list of metadata

Cited literature [5 references]  Display  Hide  Download
Contributor : Eda Publishing Association Connect in order to contact the contributor
Submitted on : Thursday, August 9, 2007 - 3:16:48 PM
Last modification on : Thursday, October 15, 2020 - 5:11:31 PM
Long-term archiving on: : Friday, April 9, 2010 - 12:33:00 AM


Files produced by the author(s)


  • HAL Id : hal-00166761, version 1
  • ARXIV : 0708.1465


Patricia Desgreys, J. Gomes da Silva, D. Robert. Dispersion Impact on Ballistic CNTFET n+-i-n+ Performances. ENS 2006, Dec 2006, Paris, France. pp.37-42. ⟨hal-00166761⟩



Les métriques sont temporairement indisponibles