Terahertz radiation generated and detected by Br+-irradiated In0.53Ga0.47As photoconductive antenna excited at 800 nm wavelength

Nicolas Chimot (1) , Juliette Mangeney (1) , Patrick Mounaix (2) , Marc Tondusson (2) , Karine Blary (3) , Jean-Francois Lampin (3)

1 IEF - Institut d'électronique fondamentale
2 CPMOH - Centre de physique moléculaire optique et hertzienne
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

The authors investigate the generation and the detection of terahertz radiation by Br+-irradiated In0.53Ga0.47As photoconductive antennas using an optical excitation at 800nm wavelength. The detected temporal wave form presents a full width at half maximum of 650fs. The signal-to-noise ratio and frequency range of the emitted terahertz radiations are similar to those emitted by low-temperature-grown GaAs photoconductive antennas. The dependences of terahertz wave form amplitude on optical pump power for both Br+-irradiated In0.53Ga0.47As and low-temperature-grown GaAs photoconductive antennas are investigated and compared.

Domaines: Sciences de l'ingénieur [physics]

Nicolas Chimot, Juliette Mangeney, Patrick Mounaix, Marc Tondusson, Karine Blary, et al.. Terahertz radiation generated and detected by Br+-irradiated In0.53Ga0.47As photoconductive antenna excited at 800 nm wavelength. Applied Physics Letters, 2006, 89, pp.83519-1-3. ⟨10.1063/1.2338538⟩. ⟨hal-00162817⟩