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Conference papers

LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide. Application to HEMT's devices

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Conference papers
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https://hal.archives-ouvertes.fr/hal-00162796
Contributor : Collection Iemn Connect in order to contact the contributor
Submitted on : Monday, July 16, 2007 - 10:40:31 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:22 PM

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  • HAL Id : hal-00162796, version 1

Citation

M.A. Di Forte-Poisson, M. Magis, M. Tordjman, R. Aubry, M. Peschang, et al.. LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide. Application to HEMT's devices. 2004, pp.107-112. ⟨hal-00162796⟩

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