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Analysis of low frequency drain current noise in AlGaN/GaN HEMTs on Si substrate

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https://hal.archives-ouvertes.fr/hal-00162793
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Submitted on : Monday, July 16, 2007 - 10:40:26 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:22 PM

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  • HAL Id : hal-00162793, version 1

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N. Malbert, N. Labat, A. Curutchet, A. Touboul, Christophe Gaquière, et al.. Analysis of low frequency drain current noise in AlGaN/GaN HEMTs on Si substrate. Fluctuation and Noise Letters, World Scientific Publishing, 2004, 4, pp.L319-L328. ⟨hal-00162793⟩

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