Analysis of low frequency drain current noise in AlGaN/GaN HEMTs on Si substrate

N. Malbert; N. Labat; A. Curutchet; A. Touboul; Christophe Gaquière; A. Minko

Journal articles

Analysis of low frequency drain current noise in AlGaN/GaN HEMTs on Si substrate

N. Malbert N. Labat A. Curutchet A. Touboul Christophe Gaquière ¹ A. Minko

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

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Journal articles

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https://hal.archives-ouvertes.fr/hal-00162793
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Submitted on : Monday, July 16, 2007 - 10:40:26 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:22 PM

Analysis of low frequency drain current noise in AlGaN/GaN HEMTs on Si substrate

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Analysis of low frequency drain current noise in AlGaN/GaN HEMTs on Si substrate

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