HAL will be down for maintenance from Friday, June 10 at 4pm through Monday, June 13 at 9am. More information
Skip to Main content Skip to Navigation
Conference papers

Dry etching for gate recessing on AlGaN/GaN HEMTs

Document type :
Conference papers
Complete list of metadata

https://hal.archives-ouvertes.fr/hal-00159034
Contributor : Collection Iemn Connect in order to contact the contributor
Submitted on : Monday, July 2, 2007 - 11:02:39 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:22 PM

Identifiers

  • HAL Id : hal-00159034, version 1

Citation

Y. Guhel, B. Boudart, M.A. Poisson, Jean-Claude de Jaeger. Dry etching for gate recessing on AlGaN/GaN HEMTs. 10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159034⟩

Share

Metrics

Record views

21