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Conference papers

Dry etching for gate recessing on AlGaN/GaN HEMTs

Y. Guhel 1 B. Boudart M.A. Poisson Jean-Claude de Jaeger
1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
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Conference papers
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https://hal.archives-ouvertes.fr/hal-00159034
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Submitted on : Monday, July 2, 2007 - 11:02:39 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:22 PM

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  • HAL Id : hal-00159034, version 1

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IEMN | CNRS | UNIV-LILLE | UNIV-VALENCIENNES

Citation

Y. Guhel, B. Boudart, M.A. Poisson, Jean-Claude de Jaeger. Dry etching for gate recessing on AlGaN/GaN HEMTs. 10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159034⟩

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