Influence of recess and epilayers in the 26-40 GHz band HEMT's intermodulation

Frédéric Bue-Erkmen (1) , Christophe Gaquière (1) , X. Hue (1) , B. Boudart (1) , Yves Crosnier (1) , Jean-Claude de Jaeger (1) , Bernard Carnez (2) , D. Pons (2)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 UMS - United Monolithic Semiconductors

The comparison of the linearity performance for three PHEMTs have been investigated in Ka band. The studied transistors are a single recessed PHEMT, a double recessed PHEMT and a double recessed dual channel PHEMT. The main result is : at a given output power level, the double recess allows a large improvement of the intermodulation ratio (IMR), thanks to its higher drain-source bias voltage capability, compared to the single recess. The second result is : the double recessed PHEMTs comparison shows that the dual channel, thanks to a more wide and uniform ransconductance distribution than the single channel, is a better solution for linearity application at 26GHz.

Domaines: Sciences de l'ingénieur [physics]

Frédéric Bue-Erkmen, Christophe Gaquière, X. Hue, B. Boudart, Yves Crosnier, et al.. Influence of recess and epilayers in the 26-40 GHz band HEMT's intermodulation. 30th European Microwave Conferences, 2000, Paris, France. pp.102-104. ⟨hal-00158996⟩